Part Number Hot Search : 
MPC8536E 30500 6C104J1G AF28TC NCP81155 85C51 IL7101N SJ7809
Product Description
Full Text Search
 

To Download HFA35HB120 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  parameter max. units v r d.c. reverse voltage 1200 v i f @ t c = 100c continuous forward current ? 11 i fsm @ t c = 25c single pulse forward current ? 190 p d @ t c = 25c maximum power dissipation 83 w t j operating junction and -55 to +150 c t stg storage temperature range ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? electrically isolated ? ceramic eyelets features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm a absolute maximum ratings (per leg) note: ? d.c. = 50% rect. wave ? 1/2 sine wave, 60 hz , p.w. = 8.33 ms thermal - mechanical characteristics parameter typ. max. units r q jc junction-to-case, single leg conducting 1.5 weight 9.3 g c/w HFA35HB120 6/30/99 www.irf.com 1 to-254aa anode cathode (isolated base) v r = 1200v v f = 3.1v q rr = 510 nc di (rec)m /dt = 350a/s pd-20370
HFA35HB120 2 www.irf.com case outline and dimensions to-254aa 3.78 ( .149 ) 3.53 ( .139 ) -a- 13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) 20.32 ( .800 ) 20.07 ( .790 ) 13 .84 ( .5 45 ) 13 .59 ( .5 35 ) -c- 1.14 ( .045 ) 0.89 ( .035 ) 3.81 ( .150 ) 1.27 ( .050 ) 1.02 ( .040 ) -b- .12 ( .005 ) 3x 2x 3.81 ( .150 ) 1 2 3 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) notes: 1 . d im e n s io n in g & t o l e r a n c in g p e r a n s i y 14 .5 m , 198 2. 2. all dimensions are show n in millimeters ( inches ). .5 0 ( .0 20 ) m c a m b .2 5 ( .0 10 ) m c legend 1 - c ollec tor 2 - e m it t e r 3 - ga te w conforms to jedec outline to-254aa dimensions in millimeters and ( inches ) legend 1- cathode 2- n/c 3- anode 1 2 3 caution beryllia warning per mil- prf-19500 package containing beryllia shall not be ground, sandblasted,machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 1200 v i r = 100a v fm max forward voltage 3.1 i f = 11a 4.0 v i f = 22a see fig. 1 2.7 i f = 11a, t j = 125c i rm max reverse leakage current 10 a v r = v r rated 1.0 ma t j = 125c, v r = 960v c t junction capacitance 28 42 pf v r = 200v see fig. 3 l s series inductance 8.7 nh measured from center of bond pad to end of anode bonding wire electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) see fig. 2 dynamic recovery characteristics (per leg) @ t j = 25c (unless otherwise specified) a/s nc a parameter min. typ. max. units test conditions t rr1 reverse recovery time 80 120 ns t j = 25c see fig. t rr2 130 195 t j = 125c 5 i f = 11a i rrm1 peak recovery current 7.25 10.9 t j = 25c see fig. i rrm2 10.2 15.3 t j = 125c 6 v r = 200v q rr1 reverse recovery charge 340 510 t j = 25c see fig. q rr2 825 1240 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current 230 350 t j = 25c see fig. di (rec)m /dt2 during t b 160 240 t j = 125c 8
HFA35HB120 www.irf.com 3 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0.001 0.01 0.1 1 10 100 1000 10000 0 300 600 900 1200 r r reverse volta g e - v ( v ) t = 150c reverse current - i (a) t = 125c j j t = 25c j t = -55c j 10 100 1000 1 10 100 1000 t = 25c j reverse volta g e - v ( v ) r t junction capacitance - c (pf) a 1 10 100 0.0 2.0 4.0 6.0 8.0 10.0 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
HFA35HB120 4 www.irf.com fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, irr- ( a) 0 50 100 150 200 250 100 1000 trr - (n s) f d i /dt - ( a/ s ) v = 200v t = 125c t = 25c r j j i = 22a i = 11a i = 5.5a f f f 1 10 100 100 1000 f di /dt - ( a/ s ) i = 22a i = 11a i = 5.5a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f d i /dt - ( a/ s ) rr q - (n c ) i = 22 a i = 11a i = 5 .5a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 10000 100 1000 f di /dt - ( a/ s ) di(rec)m /dt - (a/s) i = 11a i = 5.5a i = 22a f f f v = 200v t = 125c t = 25c r j j
HFA35HB120 www.irf.com 5 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 w g d s dif/dt adjust world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 6/99


▲Up To Search▲   

 
Price & Availability of HFA35HB120

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X